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내용

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8”, (4”/3매), SiC tray 적용

Uniformity

SiO2 :  < 3.5% 

SiNx :  < 3.5% 

(Edge exclusion : 5mm)

@ 400nm

@ 100nm

Refractive Index

SiO2 : 1.46 ~ 1.6

SiNx :  1.9 ~ 2.1

Base pressure

Process Chamber : ≤ 1.0 X 10-3 Torr

Loadlock Chamber : ≤ 2.0 X 10-2 Torr